Infineon Technologies AGBSC031N06NS3GATMA1MOSFETs
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 100 | |
| 3.1@10V | |
| 98@10V | |
| 98 | |
| 8000@30V | |
| 2500 | |
| 16 | |
| 161 | |
| 63 | |
| 38 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 400 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this BSC031N06NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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