Infineon Technologies AGBSC036NE7NS3GATMA1MOSFETs
Trans MOSFET N-CH 75V 20A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 3.8 | |
| 20 | |
| 3.6@10V | |
| 63.4@10V | |
| 63.4 | |
| 4400@37.5V | |
| 2500 | |
| 10 | |
| 18 | |
| 38 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.9@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Increase the current or voltage in your circuit with this BSC036NE7NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
| EDA / CAD Models |
UAV-Bedrohungen wirksam abwehren
So entsteht ein integriertes Counter-UAV-Abwehrsystem mit Intelligent Processing, Sensorik und Rapid Response.