Infineon Technologies AGBSC052N03LSATMA1MOSFETs
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 17 | |
| 100 | |
| 1 | |
| 5.2@10V | |
| 5.9@4.5V|12@10V | |
| 12 | |
| 770@15V | |
| 2500 | |
| 2.4 | |
| 3.6 | |
| 13 | |
| 2.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.3@10V|5.8@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this BSC052N03LSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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