50-75% Rabatt
Infineon Technologies AGBSC079N03LSCGATMA1MOSFETs
Trans MOSFET N-CH 34V 14A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 34 | |
| ±20 | |
| 2.2 | |
| 14 | |
| 7.9@10V | |
| 6.8@4.5V|14@10V | |
| 14 | |
| 1200@15V | |
| 2500 | |
| 2.4 | |
| 2.4 | |
| 14 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.6@10V|10.2@4.5V | |
| 200 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
This BSC079N03LSCGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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