Infineon Technologies AGBSC0906NSATMA1MOSFETs
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 18 | |
| 100 | |
| 1 | |
| 4.5@10V | |
| 6.7@4.5V|13@10V | |
| 13 | |
| 2.2 | |
| 2.4 | |
| 5 | |
| 3.2 | |
| 870@15V | |
| 49@15V | |
| 1.2 | |
| 330 | |
| 2500 | |
| 6.4 | |
| 6.8 | |
| 17 | |
| 4.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.8@10V|5.1@4.5V | |
| 2.5 | |
| 252 | |
| 50 | |
| 0.89 | |
| 2.8 | |
| 2 | |
| 8 | |
| 20 | |
| 18 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSC0906NSATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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