Infineon Technologies AGBSC090N03MSGATMA1MOSFETs
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| BSC090N03MSGATMA1 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 12 | |
| 9@10V | |
| 8.9@4.5V|18@10V | |
| 18 | |
| 1400@15V | |
| 2500 | |
| 5.4 | |
| 5 | |
| 8.8 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.5@10V|9@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the BSC090N03MSGATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
| EDA / CAD Models |
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