Infineon Technologies AGBSC0921NDIATMA1MOSFETs
Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 17@Q1|31@Q2 | |
| 100 | |
| 1 | |
| 5@10V@Q1|1.6@10V@Q2 | |
| 5.9@4.5V@Q1|22@4.5V@Q2 | |
| 1.9@Q 1|7@Q 2 | |
| 2.2@Q 1|6.7@Q 2 | |
| 5 | |
| 770@15V@Q1|2700@15V@Q2 | |
| 44@15V@Q 1|150@15V@Q 2 | |
| 1.2 | |
| 300@Q1|1100@Q2 | |
| 2500 | |
| 2.4@Q 1|3.6@Q 2 | |
| 3.4@Q 1|5@Q 2 | |
| 12@Q 1|25@Q 2 | |
| 1.8@Q 1|5@Q 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.8@4.5V|3.9@10V@Q1|1.7@4.5V|1.2@10V@Q2 | |
| 1 | |
| 160 | |
| 125 | |
| 0.9@Q 1|0.56@Q 2 | |
| 2.8@Q 1|2.5@Q 2 | |
| 1@Q 1|0.7@Q 2 | |
| 0.4@Q 1|0.3@Q 2 | |
| 1.4@Q 1|1@Q 2 | |
| 20 | |
| 17@Q 1|31@Q 2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) |
| Verpackungsbreite | 6.1(Max) |
| Verpackungslänge | 5.1(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TISON EP |
| 8 | |
| Leitungsform | No Lead |
Use Infineon Technologies' BSC0921NDIATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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