Infineon Technologies AGBSC098N10NS5ATMA1MOSFETs
Trans MOSFET N-CH 100V 60A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 20 | |
| 3.8 | |
| 60 | |
| 100 | |
| 1 | |
| 9.8@10V | |
| 22@10V | |
| 22 | |
| 1600@50V | |
| 2500 | |
| 4 | |
| 5 | |
| 17 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8.2@10V|10.2@6V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this BSC098N10NS5ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos 5 technology.
| EDA / CAD Models |
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