Infineon Technologies AGBSC100N06LS3GATMA1MOSFETs
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 2.2 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 10@10V | |
| 15@4.5V|34@10V | |
| 34 | |
| 3 | |
| 10 | |
| 36 | |
| 9 | |
| 2600@30V | |
| 24@30V | |
| 1.2 | |
| 500 | |
| 2500 | |
| 8 | |
| 58 | |
| 19 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.8@10V|11.8@4.5V | |
| 2.5 | |
| 220 | |
| 62 | |
| 0.92 | |
| 4 | |
| 35 | |
| 1.2 | |
| 1.7 | |
| 20 | |
| 12 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Create an effective common drain amplifier using this BSC100N06LS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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