Infineon Technologies AGBSC110N06NS3GATMA1MOSFETs
Trans MOSFET N-CH 60V 53A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 4 | |
| -55 to 150 | |
| 53 | |
| 100 | |
| 1 | |
| 11@10V | |
| 25@10V | |
| 25 | |
| 3 | |
| 12 | |
| 38 | |
| 8 | |
| 2000@30V | |
| 17@30V | |
| 2 | |
| 440 | |
| 2500 | |
| 6 | |
| 77 | |
| 14 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9@10V | |
| 2.5 | |
| 200 | |
| 50 | |
| 0.95 | |
| 5.9 | |
| 36 | |
| 1.2 | |
| 3 | |
| 12 | |
| 12 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSC110N06NS3GATMA1 power MOSFET. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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