Infineon Technologies AGBSC123N08NS3GATMA1MOSFETs
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| -55 to 150 | |
| 11 | |
| 100 | |
| 1 | |
| 12.3@10V | |
| 19@10V | |
| 19 | |
| 3.8 | |
| 6.3 | |
| 54 | |
| 6.5 | |
| 1430@40V | |
| 15@40V | |
| 2 | |
| 385 | |
| 2500 | |
| 4 | |
| 18 | |
| 19 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10.3@10V|14.1@6V | |
| 2.5 | |
| 220 | |
| 62 | |
| 0.9 | |
| 4.9 | |
| 45 | |
| 1.2 | |
| 2.8 | |
| 20 | |
| 11 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 5.15 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this BSC123N08NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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