Infineon Technologies AGBSC265N10LSFGATMA1MOSFETs
Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| -55 to 150 | |
| 6.5 | |
| 100 | |
| 1 | |
| 26.5@10V | |
| 16@10V | |
| 16 | |
| 3 | |
| 5 | |
| 238 | |
| 6 | |
| 1200@50V | |
| 8@50V | |
| 1.2 | |
| 280 | |
| 78000 | |
| 4 | |
| 24 | |
| 20 | |
| 10 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 27.7@4.5V|20@10V | |
| 160 | |
| 50 | |
| 1 | |
| 4.1 | |
| 86 | |
| 1.2 | |
| 1.85 | |
| 20 | |
| 6.5 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
This BSC265N10LSFGATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 78000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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