Infineon Technologies AGBSL308PEH6327XTSA1MOSFETs
Trans MOSFET P-CH 30V 2A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 1 | |
| 2 | |
| 80@10V | |
| 5@10V | |
| 5 | |
| 376@15V | |
| 500 | |
| 2.8 | |
| 7.7 | |
| 15.3 | |
| 5.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 62@10V|88@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSL308PEH6327XTSA1 power MOSFET. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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