Infineon Technologies AGBSO040N03MSGXUMA1MOSFETs
Trans MOSFET N-CH 30V 16A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 16 | |
| 4@10V | |
| 27@4.5V|55@10V | |
| 55 | |
| 4300@15V | |
| 2500 | |
| 9 | |
| 9 | |
| 24 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.3@10V|3.9@4.5V | |
| 140 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.65(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | DSO |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this BSO040N03MSGXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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