Infineon Technologies AGBSO130P03SHXUMA1MOSFETs
Trans MOSFET P-CH 30V 9.2A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 9.2 | |
| 13@10V | |
| 61@10V | |
| 61 | |
| 2650@25V | |
| 2360 | |
| 62 | |
| 16 | |
| 70 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9.9@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.65(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | DSO |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this BSO130P03SHXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1560 mW. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.