Infineon Technologies AGBSP125H6327XTSA1MOSFETs
Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 2.3 | |
| 0.12 | |
| 100 | |
| 0.1 | |
| 45000@10V | |
| 4.4@10V | |
| 4.4 | |
| 100@25V | |
| 1800 | |
| 110 | |
| 14.4 | |
| 20 | |
| 7.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The BSP125H6327XTSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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