Infineon Technologies AGBSP129H6327XTSA1MOSFETs
Trans MOSFET N-CH 240V 0.35A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Dual Drain | |
| SIPMOS | |
| Depletion | |
| N | |
| 1 | |
| 240 | |
| ±20 | |
| 1 | |
| -55 to 150 | |
| 0.35 | |
| 10 | |
| 50000(Min) | |
| 6000@10V | |
| 3.8@5V | |
| 1.7 | |
| 0.24 | |
| 65 | |
| 82@25V | |
| 6@25V | |
| 2.1 | |
| 12 | |
| 1800 | |
| 35 | |
| 4.1 | |
| 22 | |
| 4.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4200@10V|6500@0V | |
| 1.4 | |
| 115 | |
| 0.79 | |
| 0.37 | |
| 53 | |
| 1.2 | |
| 1.4 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this BSP129H6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |
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