Infineon Technologies AGBSP295H6327XTSA1MOSFETs
Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 1.8 | |
| -55 to 150 | |
| 1.8 | |
| 10 | |
| 0.1 | |
| 300@10V | |
| 14@10V | |
| 14 | |
| 5.6 | |
| 0.9 | |
| 38 | |
| 295@25V | |
| 45@25V | |
| 0.8 | |
| 95 | |
| 1800 | |
| 19 | |
| 9.9 | |
| 27 | |
| 5.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 220@10V|390@4.5V | |
| 7.2 | |
| 115 | |
| 0.84 | |
| 3.1 | |
| 36 | |
| 1.3 | |
| 1.1 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
This BSP295H6327XTSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.