Infineon Technologies AGBSP324H6327XTSA1MOSFETs
Trans MOSFET N-CH 400V 0.17A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 2.3 | |
| 0.17 | |
| 100 | |
| 0.1 | |
| 25000@10V | |
| 4.54@10V | |
| 4.54 | |
| 2.17 | |
| 0.35 | |
| 104 | |
| 103@25V | |
| 9.2 | |
| 1800 | |
| 68 | |
| 4.4 | |
| 17 | |
| 4.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 13600@10V|14300@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, BSP324H6327XTSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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