Infineon Technologies AGBSP372NH6327XTSA1MOSFETs
Trans MOSFET N-CH 100V 1.8A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 1.8 | |
| -55 to 150 | |
| 1.8 | |
| 10 | |
| 0.1 | |
| 230@10V | |
| 9.5@10V | |
| 9.5 | |
| 3 | |
| 0.6 | |
| 51.5 | |
| 247@25V | |
| 19@25V | |
| 0.8 | |
| 40 | |
| 1800 | |
| 18 | |
| 6.7 | |
| 47.3 | |
| 5.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 153@10V|172@4.5V | |
| 1.8 | |
| 7.2 | |
| 70 | |
| 0.82 | |
| 2.3 | |
| 38 | |
| 1.1 | |
| 1.4 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSP372NH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 1800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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