Infineon Technologies AGBSS126H6327XTSA2MOSFETs
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 1.6 | |
| -55 to 150 | |
| 0.021 | |
| 100 | |
| 500000@10V | |
| 1.4@5V | |
| 1.2 | |
| 0.05 | |
| 13.2 | |
| 21@25V | |
| 1@25V | |
| 2.7 | |
| 2.4 | |
| 500 | |
| 115 | |
| 9.7 | |
| 14 | |
| 6.1 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 280000@10V|320000@0V | |
| 0.085 | |
| 0.81 | |
| 0.1 | |
| 160 | |
| 1.2 | |
| 2 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this BSS126H6327XTSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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