Infineon Technologies AGBSS138NH6327XTSA2MOSFETs
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| 5000nm | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 1.4 | |
| -55 to 150 | |
| 0.23 | |
| 10 | |
| 3500@10V | |
| 1@10V | |
| 1 | |
| 0.3 | |
| 0.1 | |
| 3.3 | |
| 32@25V | |
| 2.8@25V | |
| 0.6 | |
| 7.2 | |
| 360 | |
| 8.2 | |
| 3 | |
| 6.7 | |
| 2.3 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 2200@10V|3500@4.5V | |
| 0.92 | |
| 0.83 | |
| 3.3 | |
| 9.1 | |
| 1.2 | |
| 1 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSS138NH6327XTSA2 power MOSFET is for you. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook fĂĽr praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.