Infineon Technologies AGBSS214NH6327XTSA1MOSFETs
Trans MOSFET N-CH 20V 1.5A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| 1.5 | |
| 100 | |
| 1 | |
| 140@4.5V | |
| 0.8@5V | |
| 107@10V | |
| 500 | |
| 1.4 | |
| 7.8 | |
| 6.8 | |
| 4.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 106@4.5V|175@2.5V | |
| 6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This BSS214NH6327XTSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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