Infineon Technologies AGBSS306NH6327XTSA1MOSFETs
Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 2.3 | |
| 57@10V | |
| 1.5@5V | |
| 207@15V | |
| 500 | |
| 1.4 | |
| 2.3 | |
| 8.3 | |
| 4.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 44@10V|67@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSS306NH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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