Infineon Technologies AGBSS308PEH6327XTSA1MOSFETs

Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R Automotive AEC-Q101

In addition to amplifying electronic signals, you'll be able to switch between various lines with the BSS308PEH6327XTSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

72.000 Stück: Versand in vsl. 2 Tagen

    Total144,30 €Price for 3000

    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2551+
      Manufacturer Lead Time:
      26 Wochen
      Country Of origin:
      China
      • In Stock: 72.000 Stück
      • Price: 0,0481 €

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