Infineon Technologies AGBSS316NH6327XTSA1MOSFETs
Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 1.4 | |
| 160@10V | |
| 0.6@5V | |
| 71@15V | |
| 500 | |
| 1 | |
| 2.3 | |
| 5.8 | |
| 3.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 119@10V|191@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this BSS316NH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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