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Infineon Technologies AGBSS670S2LH6327XTSA1MOSFETs
Trans MOSFET N-CH 55V 0.54A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| BSS670S2LH6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 55 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.54 | |
| 100 | |
| 0.1 | |
| 650@10V | |
| 1.7@10V | |
| 1.7 | |
| 0.57 | |
| 0.19 | |
| 22 | |
| 56@25V | |
| 7@25V | |
| 1.2 | |
| 13 | |
| 360 | |
| 24 | |
| 25 | |
| 21 | |
| 9 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 346@10V|430@4.5V | |
| 2.2 | |
| 350 | |
| 0.8 | |
| 3.1 | |
| 51 | |
| 1.1 | |
| 1.6 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the BSS670S2LH6327XTSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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