Infineon Technologies AGBSS83PH6327XTSA1MOSFETs
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| SIPMOS | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.33 | |
| 2000@10V | |
| 2.38@10V | |
| 2.38 | |
| 1.1 | |
| 0.12 | |
| 37.5 | |
| 62@25V | |
| 19 | |
| 360 | |
| 61 | |
| 71 | |
| 56 | |
| 23 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 1400@10V|2000@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this BSS83PH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.
| EDA / CAD Models |
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