Infineon Technologies AGBSS84PH6327XTSA2MOSFETs
Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.17 | |
| 100 | |
| 1 | |
| 8000@10V | |
| 1@10V | |
| 1 | |
| 0.3 | |
| 0.25 | |
| 10 | |
| 15@25V | |
| 2@25V | |
| 1 | |
| 6 | |
| 360 | |
| 20.5 | |
| 16.2 | |
| 8.6 | |
| 6.7 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 5800@10V|8000@4.5V | |
| 0.68 | |
| 350 | |
| 0.93 | |
| 3.42 | |
| 23 | |
| 1.24 | |
| 1.5 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, BSS84PH6327XTSA2 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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