Infineon Technologies AGBSZ0902NSATMA1MOSFETs
Trans MOSFET N-CH 30V 19A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 19 | |
| 100 | |
| 1 | |
| 2.6@10V | |
| 13@4.5V|26@10V | |
| 26 | |
| 1700@15V | |
| 2100 | |
| 3.6 | |
| 5.2 | |
| 21 | |
| 4.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.2@10V|2.8@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 3.3 mm |
| Verpackungslänge | 3.3 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
As an alternative to traditional transistors, the BSZ0902NSATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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