Infineon Technologies AGBSZ097N04LSGATMA1MOSFETs
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2 | |
| 12 | |
| 9.7@10V | |
| 8.6@4.5V|18@10V | |
| 18 | |
| 1400@20V | |
| 2100 | |
| 2.8 | |
| 2.4 | |
| 16 | |
| 3.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 3.3 mm |
| Verpackungslänge | 3.3 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this BSZ097N04LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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