Infineon Technologies AGBSZ100N06NSATMA1MOSFETs
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.3 | |
| 40 | |
| 100 | |
| 1 | |
| 10@10V | |
| 12@10V | |
| 12 | |
| 860@30V | |
| 2100 | |
| 2 | |
| 2 | |
| 10 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8.5@10V|12.4@6V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 3.3 |
| Verpackungslänge | 3.3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
Amplify electronic signals and switch between them with the help of Infineon Technologies' BSZ100N06NSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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