Infineon Technologies AGBSZ120P03NS3GATMA1MOSFETs
Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 350nm | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 1.9 | |
| -55 to 150 | |
| 11 | |
| 100 | |
| 1 | |
| 12@10V | |
| 30@10V | |
| 30 | |
| 5 | |
| 11 | |
| 55 | |
| 13 | |
| 2240@15V | |
| 74@15V | |
| 3.1 | |
| 1090 | |
| 52000 | |
| 5 | |
| 11 | |
| 23 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 9@10V|12@6V | |
| 2.1 | |
| 160 | |
| 60 | |
| 4.6 | |
| 47 | |
| 1.1 | |
| 2.5 | |
| 25 | |
| 11 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 3.3 mm |
| Verpackungslänge | 3.3 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TSDSON EP |
| 8 | |
| Leitungsform | No Lead |
This BSZ120P03NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 52000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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