| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 450 | |
| 5 | |
| 1.1@0.2A@1A | |
| 0.8@30mA@0.3A|1@200mA@1A | |
| 2 | |
| 30@100mA@5V | |
| 50000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.9 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.1 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN BUX85G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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