Reduced Price
Infineon Technologies AGBUZ30AH3045AATMA1MOSFETs
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 21 | |
| 130@10V | |
| 1400@25V | |
| 125000 | |
| 90 | |
| 70 | |
| 250 | |
| 30 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this BUZ30AH3045AATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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