WOLFSPEED, INCC6D06065Q-TR | Silicon Carbide Schottky DiodeGleichrichter
650 V Silicon Carbide Schottky Barrier diode in low profile QFN package
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.
Wolfspeed’s latest QFN 8x8 650 V diodes offers best-in-class performance. Wolfspeed SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, the SiC diodes provide lower overall system costs in a variety of diverse applications.
- Features
- • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
- • Zero Reverse Recovery Current / Forward Recovery Voltage
- • Temperature-Independent Switching Behavior
- • Low Profile Package with Low Inductance
- Applications
- • Enterprise Power, Server, & Telecom Power Supplies
- • Switched Mode Power Supplies
- • Energy Storage Systems
- • Battery Management Systems
- • Industrial Power Supplies
- • Boost Power Factor Correction
- • Bootstrap Diode
- • LLC Clamping
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.40 | |
| Automotive | No |
| PPAP | No |
| Schottky Diode | |
| SiC | |
| Max. DC-Sperrspannung (V) | 650 |
| Single Dual Anode | |
| 650 | |
| 21 | |
| 48 | |
| 1.5@6A | |
| 20 | |
| 393(Typ) | |
| 62000 | |
| -55 | |
| 175 | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) mm |
| Verpackungsbreite | 8.1(Max) mm |
| Verpackungslänge | 8.1(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | QFN |
| Lieferantenverpackung | QFN EP |
| 4 |
| EDA / CAD Models |
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