WOLFSPEED, INCCCB016M12GM3TMOSFETs
SiC, Module, 16mΩ,1200V, 48 mm, GM3 Six-Pack, Industrial, Gen 3, Pre-Applied TIM
Features
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Ultra-Low Loss
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High Frequency Operation
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Zero Turn-Off Tail Current from MOSFET
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Normally-Off, Fail-Safe Device Operation
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Aluminum Nitride Ceramic Substrate
-
Optional Pre-Applied Thermal Interface Material
Benefits
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Enables Compact, Lightweight Systems
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Increased System Efficiency, due to Low Switching & Conduction Losses of SiC
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Reduced Thermal Requirements and System Cost
Target Applications
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DC-DC Converters
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EV Chargers
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High-Efficiency Converters / Inverters
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Renewable Energy
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Smart-Grid / Grid-Tied Distributed Generation
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Hex | |
| Enhancement | |
| N | |
| 6 | |
| 1200 | |
| 23 | |
| -40 to 175 | |
| 50 | |
| 22.1@15V | |
| 236@15V | |
| 6700@1000V | |
| -40 | |
| 125 | |
| Industrial | |
| Befestigung | Screw |
| Verpackungshöhe | 12 mm |
| Verpackungsbreite | 56.7 mm |
| Verpackungslänge | 62.8 mm |
| Leiterplatte geändert | 38 |
| 38 |
| EDA / CAD Models |
KI-Systeme in der Medizin
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