| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 1.6 | |
| 10000 | |
| 1 | |
| 303@10V | |
| 2.2@10V | |
| 2.2 | |
| 82@10V | |
| 900 | |
| 5.4 | |
| 3.3 | |
| 12 | |
| 4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | CPH |
| 3 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, CPH3360-TL-H power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 900 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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