| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 1.1 | |
| 1.6 | |
| 100 | |
| 1 | |
| 34@4.5V | |
| 2.3@4.5V | |
| 0.3 | |
| 0.5 | |
| 385@6V | |
| 1200 | |
| 9.7 | |
| 5.9 | |
| 14.4 | |
| 3.9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.28(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 1 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | BGA |
| Lieferantenverpackung | DSBGA |
| 4 | |
| Leitungsform | Ball |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD13201W10 power MOSFET is for you. Its maximum power dissipation is 1200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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