| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.35um | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 2.1 | |
| 21 | |
| 5.1@10V | |
| 6.5@4.5V | |
| 1.7 | |
| 3 | |
| 20 | |
| 940@12.5V | |
| 810 | |
| 3000 | |
| 4.6 | |
| 13.4 | |
| 8.4 | |
| 7.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.1@10V|5.7@4.5V | |
| 1.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) |
| Verpackungsbreite | 5.8(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
This CSD16404Q5A power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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