| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 1.7 | |
| 100 | |
| 100 | |
| 1 | |
| 1.07@10V | |
| 36@4.5V | |
| 13 | |
| 4750@15V | |
| 3200 | |
| 13 | |
| 34 | |
| 25 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 6 mm |
| Verpackungslänge | 5 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSON-CLIP EP |
| 8 | |
| Leitungsform | No Lead |
Use Texas Instruments' CSD16556Q5B power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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