| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 15 | |
| 7.5@8V | |
| 5.1@4.5V | |
| 1.1 | |
| 1.8 | |
| 735@15V | |
| 2700 | |
| 3.1 | |
| 9.1 | |
| 10.4 | |
| 5.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 3.3 |
| Verpackungslänge | 3.3 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSON-CLIP EP |
| 8 | |
| Leitungsform | No Lead |
This CSD17304Q3 power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 2700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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