| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 24 | |
| 3.7@8V | |
| 11.8@4.5V | |
| 2.4 | |
| 1670@15V | |
| 3200 | |
| 6.4 | |
| 13.1 | |
| 18.4 | |
| 7.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 5.75 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
This CSD17306Q5A power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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