| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| -55 to 150 | |
| 32 | |
| 2@8V | |
| 24@4.5V | |
| 5.2 | |
| 3290@15V | |
| 3200 | |
| 12 | |
| 18 | |
| 33 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) mm |
| Verpackungsbreite | 6.1(Max) mm |
| Verpackungslänge | 5.1(Max) mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | VSON-CLIP EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this CSD17311Q5 power MOSFET from Texas Instruments. Its maximum power dissipation is 3200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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