| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 7.3 | |
| 30@8V | |
| 2.1@4.5V | |
| 0.4 | |
| 260@15V | |
| 2400 | |
| 1.3 | |
| 3.9 | |
| 4.2 | |
| 2.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | WSON EP |
| 6 | |
| Leitungsform | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD17313Q2 power MOSFET can provide a solution. Its maximum power dissipation is 2300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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