| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| FemtoFET | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 12 | |
| 1.1 | |
| 3.1 | |
| 50 | |
| 0.1 | |
| 109@8V | |
| 1.04@4.5V | |
| 0.133 | |
| 150@15V | |
| 500 | |
| 3.6 | |
| 1.4 | |
| 10.8 | |
| 3.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.85 | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.04(Max) |
| Verpackungslänge | 0.64(Max) |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PicoStar |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD17381F4 power MOSFET can provide a solution. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
| EDA / CAD Models |
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