| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 12 | |
| 1.1 | |
| 3 | |
| 50 | |
| 0.1 | |
| 121@8V | |
| 0.92@4.5V|1.57@8V | |
| 0.075 | |
| 0.28 | |
| 150@15V | |
| 500 | |
| 4 | |
| 1 | |
| 11 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.85 | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.04(Max) |
| Verpackungslänge | 0.64(Max) |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | PicoStar |
| 3 |
This CSD17484F4T power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with femtofet technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.