| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 16 | |
| 8.1@10V | |
| 3.6@4.5V | |
| 1.1 | |
| 580@15V | |
| 3000 | |
| 3.7 | |
| 12 | |
| 10.5 | |
| 6.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.75 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | SON EP |
| 8 |
Make an effective common source amplifier using this CSD17522Q5A power MOSFET from Texas Instruments. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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