| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.8 | |
| 100 | |
| 100 | |
| 1 | |
| 2@10V | |
| 25@4.5V|53@10V | |
| 53 | |
| 5.4 | |
| 8.9 | |
| 3410@15V | |
| 3100 | |
| 3 | |
| 16 | |
| 23 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 6 |
| Verpackungslänge | 5 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSON-CLIP EP |
| 8 | |
| Leitungsform | No Lead |
This CSD17576Q5B power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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