| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.8 | |
| 35 | |
| 100 | |
| 1 | |
| 4.8@10V | |
| 13@4.5V|27@10V | |
| 27 | |
| 2.8 | |
| 1780@15V | |
| 2500 | |
| 4 | |
| 31 | |
| 20 | |
| 4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 3.1(Max) |
| Verpackungslänge | 3.25(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | VSONP EP |
| 8 |
Increase the current or voltage in your circuit with this CSD17577Q3AT power MOSFET from Texas Instruments. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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